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单P-MOS

PE40P36K

PE40P36K是 V DS=-40V, I D=-36A, R DS(ON)<21mΩ,@ V GS=-10V, R DS(ON)<32mΩ,@ V GS=-4.5V的P-Channel Enhancement Mode Power MOSFET.

PE40P36K的丝印是PE40P36K.PE40P36K提供TO-252-2L封装.

The PE40P36K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE40P36K概述:
    PE40P36K是 V DS=-40V, I D=-36A, R DS(ON)<21mΩ,@ V GS=-10V, R DS(ON)<32mΩ,@ V GS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE40P36K的丝印是PE40P36K.PE40P36K提供TO-252-2L封装.
    The PE40P36K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE40P36K特性:
    V DS= -40V, I D= -36A
    RDS(ON) < 21mΩ @ VGS=-10V
    R DS(ON)< 32mΩ @ V GS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE40P36K应用:
    DC-DC converter
    Load switch
    Power management

    PE40P36K典型应用及引脚图:

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