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HYG045P03LQ1C2

    HYG045P03LQ1C2是VDS=-30V,RDS(ON)=3.8mΩ (typ.) @VGS=-10VRDS(ON)=6.2mΩ (typ.) @VGS=-4.5V,ID=-80A的P沟道增强Mosfet。提供PPAK5*6-8L封装。
    HYG045P03LQ1C2 Description/描述:
        HYG045P03LQ1C2是VDS=-30V,RDS(ON)=3.8mΩ (typ.) @VGS=-10VRDS(ON)=6.2mΩ (typ.) @VGS=-4.5V,ID=-80A的P沟道增强Mosfet。提供PPAK5*6-8L封装。
        
    HYG045P03LQ1C2 Features/特性:
    -30V/-80A
    RDS(ON)=3.8 mΩ (typ.) @VGS=-10V
    RDS(ON)=6.2mΩ (typ.) @VGS=-4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen- Free Devices Available

    HYG045P03LQ1C2 Applications/应用:
    Switching Application
    Power Management for DC/DC
    Battery Protection

    HYG045P03LQ1C2 Ordering Information/订购信息:
    Package Type
    Unit
    Quantity
    PPAK5*6-8L
    Reel
    5000
    HYG045P03LQ1C2 TO252 Pin Configuration/引脚配置:
    HYG045P03LQ1C2 Avalanche Test Circuit/雪崩试验电路:
    HYG045P03LQ1C2 Switching Time Test Circuit/开关时间测试电路:
    HYG045P03LQ1C2 Gate Charge Test Circuit/闸电荷测试电路:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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