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单P-MOS

HYG210P06LQ1D/U/V

HYG210P06LQ1D/U/V是VDS=-60V,ID=-40A,RDS(ON)=19mΩ(typ.) @VGS=-10V,RDS(ON)=25mΩ(typ.) @VGS=-4.5V的P沟道Mosfet。提供TO-252-2L,TO-251-3L,TO-251-3S封装。
    HYG210P06LQ1D/U/V Description/概述:
    HYG210P06LQ1D/U/V是VDS=-60V,ID=-40A,RDS(ON)=19mΩ(typ.) @VGS=-10V,RDS(ON)=25mΩ(typ.) @VGS=-4.5V的P沟道Mosfet。提供TO-252-2L,TO-251-3L,TO-251-3S封装。

    HYG210P06LQ1D/U/V Feature/特性:
    -60V/-40A
    RDS(ON)=19mΩ(typ.) @VGS=-10V
    RDS(ON)=25mΩ(typ.) @VGS=-4.5V
    100% avalanche tested
    Reliable and Rugged
    Halogen Free and Green Devices Available(RoHS Compliant)

    HYG210P06LQ1D/U/V Applications/应用:
    Power Management in DC/DC
    Load switching.
    Motor control.

    HYG210P06LQ1D/U/V Pin Description:

    HYG210P06LQ1D/U/V Avalanche Test Circuit:

    HYG210P06LQ1D/U/V Switching Time Test Circuit:

    HYG210P06LQ1D/U/V Gate Charge Test Circuit:

    HYG210P06LQ1D/U/V Device Per Unit:
    Package Type
    Unit
    Quantity

    TO-252-2L

    Tube

    75

    TO-252-2L

    Reel

    2500

    TO-251-3L

    Tube

    75

    TO-251-3S

    Tube

    75

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