PE7150M概述:
PE7150M是
VDS=-18V,
ID=-50A,
RDS(ON)<6.3mΩ,@
VGS=-4.5V,
RDS(ON)<7.0mΩ,@
VGS=-3.8V,
RDS(ON)< 8.1mΩ,@
VGS=-3.1V,
RDS(ON)<9.0mΩ,@
VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
PE7150M的丝印是PE7150M.PE7150M提供PDFN3.3*3.3-8L封装.
PE7150M的丝印是PE7150M.PE7150M提供PDFN3.3*3.3-8L封装.
The PE7150M uses advanced trench technology to provide excellent
R
DS(ON)and low gate charge. It can be used in a wide variety of applications.
PE7150M特性:
PE7150M特性:
VDS= -18V,
ID= -50A
RDS(ON)< 6.3mΩ @
VGS=-4.5V
RDS(ON)< 7.0mΩ @
VGS=-3.8V
RDS(ON)< 8.1mΩ @
VGS=-3.1V
RDS(ON) < 9.0mΩ @
VGS=-2.5V
High Power and current handing capability
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Good stability and uniformity with high EAS
PE7150M应用:
PWM applications
Load switch
Power management
Battery protection
PE7150M典型应用及引脚: